TCMT110. series www.vishay.com vishay semiconductors rev. 3.0, 10-mar-16 1 document number: 83510 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 optocoupler, phototransistor output, single channel, half pitch mini-flat package description the TCMT110. series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin package. the elements are mounted on one leadframe providing a fixed distance between input an d output for highest safety requirements. features ? low profile package (half pitch) ? ac isolation test voltage 3750 v rms ? low coupling capacita nce of typical 0.3 pf ? current transfer ratio (c tr) selected into groups ? low temperature coefficient of ctr ? wide ambient temperature range ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? programmable logic controllers ?modems ? answering machines ? general applications agency approvals ? ul1577, file no. e76222, double protection ? cul component acceptance service no. 5a, double protection ? din en 60747-5-5 (vde 0884-5) ? fimko: fi en 60950-1:2006 ? bsi: bs en60065:2002 bs en60950-1:2006 ? cqc gb 8898-2011, gb 4943.1-2011 (suitable for installation altitude below 2000 m) note ? available only on tape and reel. ac 12 ce 43 22628-1 ordering information TCMT110# part number agency certified/ package ctr (%) 5 ma 10 ma 5 ma ul, cul, fimko, bsi, vde 50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400 ssop-4 TCMT1100 TCMT1101 TCMT1102 TCMT1103 tc mt1104 TCMT1105 TCMT1106 TCMT1107 TCMT1108 TCMT1109 ss op-4 7.21 mm
TCMT110. series www.vishay.com vishay semiconductors rev. 3.0, 10-mar-16 2 document number: 83510 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? stresses in excess of the absolu te maximum ratings can ca use permanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those give n in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of th e time can adversely affect reliability. (1) refer to reflow profile for soldering conditions for surface mounted devices. also refer to assembly instructions ( www.vishay.com/doc?80054 ). note ? minimum and maximum values are testing requirements. typical values are characteristics of the device and are the result of en gineering evaluation. typical values are for information only and are not part of the testing requirements. absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma forward surge current t p 10 s i fsm 1.5 a power dissi pation p diss 100 mw junction temperature t j 125 c output collector emitter voltage v ceo 70 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissi pation p diss 150 mw junction temperature t j 125 c coupler ac isolation test voltage (rms) related to standard climate 23/50 din 50014 v iso 3750 v rms total power dissipation p tot 250 mw operating ambient temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 125 c soldering temperature (1) t sld 260 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit input forward voltage i f = 50 ma v f 1.35 1.6 v junction capacitance v r = 0, f = 1 mhz c j 8pf output collector emitter voltage i c = 100 a v ceo 70 v emitter collector voltage i e = 100 a v eco 7v collector dark current v ce = 20 v, i f = 0 a i ceo 100 na coupler collector emitter sa turation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 f c 100 khz coupling capaci tance f = 1 mhz c k 0.3 pf
TCMT110. series www.vishay.com vishay semiconductors rev. 3.0, 10-mar-16 3 document number: 83510 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - test circuit, non-saturated operation fig. 2 - test circuit, saturated operation fig. 3 - switching times current transfer ratio (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit i c /i f v ce = 5 v, i f = 5 ma TCMT1100 ctr 50 600 % v ce = 5 v, i f = 10 ma TCMT1101 ctr 40 80 % TCMT1102 ctr 63 125 % TCMT1103 ctr 100 200 % TCMT1104 ctr 160 320 % v ce = 5 v, i f = 5 ma TCMT1105 ctr 50 150 % TCMT1106 ctr 100 300 % TCMT1107 ctr 80 160 % TCMT1108 ctr 130 260 % TCMT1109 ctr 200 400 % switching characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit delay time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 1) t d 4.0 s rise time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 1) t r 5.5 s fall time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 1) t f 7.0 s storage time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 1) t s 1.5 s turn-on time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 1) t on 9.5 s turn-off time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 1) t off 8.5 s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k , (see figure 2) t on 3.0 s turn-off time v s = 5 v, i f = 10 ma, r l = 1 k , (see figure 2) t off 20.0 s channel i channel ii 95 10804 r g = 50 t p t p = 50 s t = 0.01 + 5 v i f 0 50 100 i f i c = 2 ma; adjusted through input amplitude oscilloscope r l = 1 m c l = 20 pf channel i channel ii 95 10843 r g = 50 t p t p = 50 s t = 0.01 + 5 v i c i f 0 50 1 k i f = 10 ma oscilloscope r l c l 20 pf 1 m t p t t 0 0 10 % 90 % 100 % t r t d t on t s t f t off i f i c t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time 96 11698
TCMT110. series www.vishay.com vishay semiconductors rev. 3.0, 10-mar-16 4 document number: 83510 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? as per iec 60747-5-5, 7.4.3.8.2, this opto coupler is suitable for saf e electrical insulation only within the safety rating s. compliance with the safety ratings shall be ensured by means of protective circuits. note ? as per iec 60747-5-2, 7.4.3.8.1, this opto coupler is suitable for saf e electrical insulation only within the safety rating s. compliance with the safety ratings shall be ensured by means of protective circuits. typical characteristics (t amb = 25 c, unless otherwise specified) fig. 4 - total power dissipation vs. ambient temperature fig. 5 - forward voltage vs. forward current safety and insulation ratings parameter test condition symbol value unit climatic classification (accor ding to iec 68 part 1) 40/110/21 comparative tracking index cti 175 maximum rated withstanding isolation voltage t = 1 min v iso 3750 v rms maximum transient isolation voltage v iotm 6000 v maximum repetitive pe ak isolation voltage v iorm 707 v apparent charge test voltage (method a) v iorm x 1.6 = v pr , type and sample test, t m = 60 s, partial discharge < 5 pc v pr 1132 v peak apparent charge test voltage (method b) v iorm x 1.875 = v pr , 100 % production test with t m = 1 s, partial discharge < 5 pc v pr 1326 v peak isolation resistance v io = 500 v dc , t amb = 100 c r io 10 11 isolation resistance ( under fault conditions) v io = 500 v dc , t amb = t si r io 10 9 output safety power p so 350 mw input safety current i si 150 ma input safety temperature t si 175 c safety and insulation ratings parameter test condition symbol min. typ. max. unit creepage distance 5mm clearance distance 5mm insulation thickness, reinforced rated per iec60950 2.10.5.1 0.4 mm 0 50 100 150 200 250 300 0 40 80 120 p tot - total power dissipation (mw) t amb - ambient temperature (c) 96 11700 coupled device phototransistor ir-diode 0.1 1 10 100 0.6 0.8 1.0 1.2 1.4 1.6 i f - forward current (ma) v f - forward voltage (v) t amb = 110 c t amb = 75 c t amb = 25 c t amb = 0 c t amb = -55 c
TCMT110. series www.vishay.com vishay semiconductors rev. 3.0, 10-mar-16 5 document number: 83510 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 6 - collector current vs . collector emitter voltage fig. 7 - leakage current vs. ambient temperature fig. 8 - collector current vs . collector emitter voltage fig. 9 - normalized current transfer ratio (non-saturated) vs. ambient temperature fig. 10 - normalized current transfer ratio (saturated) vs. ambient temperature fig. 11 - collector emitter voltage vs. ambient temperature 0 5 10 15 20 25 30 35 40 45 50 55 0 1 2 3 4 5 6 7 8 9 10 i c - collector current (ma) v ce - collector emitter voltage (non- s at) (v) i f = 30 ma i f = 35 ma i f = 1 ma i f = 20 ma i f = 15 ma i f = 10 ma i f = 5 ma i f = 25 ma 0.001 0.01 0.1 1 10 100 1000 10 000 i ce0 - leakage current (na) t amb - ambient temperature ( c) i f = 0 ma v ce = 40 v v ce = 24 v v ce = 12 v -60 -40 -20 0 20 40 60 80 120 100 0 2 4 6 8 10 12 14 00.10.20.30.4 i c - collector current (ma) v ce - collector emitter voltage (v) i f = 1 ma i f = 10 ma i f = 5 ma i f = 2 ma 0 0.2 0.4 0.6 0.8 1.0 1.2 n ctr - normalized ctr (non- s aturated) t amb - ambient temperature ( c) normalized to ctr value: i f = 5 ma, v ce = 5 v, t amb = 25 c i f = 5 ma -60 -40 -20 0 20 40 60 80 120 100 0 0.2 0.4 0.6 0.8 1.0 1.2 n ctr - normalized ctr ( s at) t amb - ambient temperature ( c) i f = 5 ma normalized to ctr value: i f = 5 ma, v ce = 5 v, t amb = 25 c -60 -40 -20 0 20 40 60 80 120 100 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 v ce s at - collector emitter voltage (v) t amb - ambient temperature ( c) i c = 1 ma i c = 2 ma i c = 5 ma i f = 10 ma -60 -40 -20 0 20 40 60 80 120 100
TCMT110. series www.vishay.com vishay semiconductors rev. 3.0, 10-mar-16 6 document number: 83510 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - normalized ctr (non-saturated) vs. forward current fig. 13 - normalized ctr (saturated) vs. forward current fig. 14 - f ctr vs. phase angle fig. 15 - f ctr vs. collector current fig. 16 - switching time vs. load resistance 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 n ctr - normalized ctr (n s ) i f - forward current (ma) t amb = 0 c t amb = 100 c t amb = 75 c t amb = -55 c t amb = 25 c normalized to: i f = 5 ma, v ce = 5 v, t amb = 25 c 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 n ctr - normalized ctr ( s at) i f - forward current (ma) v ce = 0.4 v normalized to: i f = 5 ma, v ce = 5 v, t amb = 25 c t amb = 0 c t= 75 c t amb = -55 c - t amb = 25 c t amb = 100 c amb -160 -140 -120 -100 -80 -60 -40 -20 0 1 10 100 1000 pha s e angle (deg) f - fre q uency (khz) v ce = 5 v r l = 100 r l = 1000 1 10 100 1000 0.1 1 10 100 f ctr (khz) i c (ma) v cc = 5 v 0.1 1 10 100 1000 0 5 10 15 20 t on , t off s witching time ( s ) r l - load re s i s tance (k ) t off ( s ) t on ( s ) v ce = 5 v, i c = 2 ma
TCMT110. series www.vishay.com vishay semiconductors rev. 3.0, 10-mar-16 7 document number: 83510 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters package marking (example) tape and reel packaging in millimeters fig. 17 7.00 0.30 4.40 typ. 0.2 0.05 0.60 + 0.20 - 0.30 lead coplanarity 0.1 max. 0.9 5.00 1.27 7.60 possible footprint pin one i.d. 12 43 2.60 0.20 2.00 0.10 0.10 0.10 0.4 0.1 1.27 nom. 2.85 max. mt1100 v yww 68 7.5 0.1 1.75 0.1 16 0.3 8 0.1 2.95 0.1 1.6 0.1 pin 1 2 0.1 4 0.1 1.55 0.05 7.4 0.1 0.3 0.05 7.4 0.1 5 4.4 2.6 0.1 2.2 0.1
TCMT110. series www.vishay.com vishay semiconductors rev. 3.0, 10-mar-16 8 document number: 83510 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 solder profiles fig. 18 - lead (pb)-free reflow solder profile according to j-std-020 for smd devices handling and storage conditions esd level: hbm class 2 floor life: unlimited conditions: t amb < 30 c, rh < 85 % moisture sensitivity level 1, according to j-std-020 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
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